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- Publications
- Influence
FinFET scaling to 10 nm gate length
- Bin Yu, L. Chang, +11 authors D. Kyser
- Engineering
- Digest. International Electron Devices Meeting,
- 8 December 2002
While the selection of new "backbone" device structure in the era of post-planar CMOS is open to a few candidates, FinFET and its variants show great potential in scalability and manufacturability… Expand
Gate length scaling and threshold voltage control of double-gate MOSFETs
- L. Chang, S. Tang, T. King, J. Bokor, C. Hu
- Materials Science
- International Electron Devices Meeting…
- 1 December 2000
In the nanoscale regime, the double-gate MOSFET can provide superior short-channel behavior. For this structure, device scaling issues are explored. Gate length scaling will be limited by the ability… Expand
Sub-50 nm P-channel FinFET
- X. Huang, Wen-Chin Lee, +11 authors C. Hu
- Materials Science
- 1 May 2001
High-performance PMOSFETs with sub-50-nm gate-length are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel effects. This vertical double-gate SOI… Expand
Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs
- L. Chang, K. Yang, Yee-Chia Yeo, I. Polishchuk, T. King, C. Hu
- Materials Science
- 1 December 2002
The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum confinement in the channel of these… Expand
FinFET process refinements for improved mobility and gate work function engineering
- Y. Choi, L. Chang, +7 authors J. Bokor
- Materials Science
- Digest. International Electron Devices Meeting,
- 8 December 2002
Process refinements to improve the performance of FinFETs are described. Hydrogen annealing is shown to provide high surface quality on etched fin sidewalls for improved drive current and noise… Expand
FinFET-a quasi-planar double-gate MOSFET
- S. Tang, L. Chang, +7 authors C. Hu
- Materials Science
- IEEE International Solid-State Circuits…
- 5 February 2001
TLDR
Extremely scaled silicon nano-CMOS devices
Silicon-based CMOS technology can be scaled well into the nanometer regime. High-performance, planar, ultrathin-body devices fabricated on silicon-on-insulator substrates have been demonstrated down… Expand
Comparison of AC drives for electric vehicles-a report on experts' opinion survey
- L. Chang
- Engineering
- IEEE Aerospace and Electronic Systems Magazine
- 1 August 1994
It is recognized that wide applications of electric vehicles (EVs) will bring tremendous social, economical and ecological benefits. With the growing interests in electric vehicles, much effort is… Expand
CMOS circuit performance enhancement by surface orientation optimization
With the advent of novel device structures that can be easily fabricated outside of the traditional (100) plane, it may be advantageous to change the crystal orientation to optimize CMOS circuit… Expand