L. Théolier

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This work presents a methodology using mixed-mode simulation with TCAD Sentaurus to model, analyze, and optimize the representation of the Deep Trench Termination Diode (DT<sup>2</sup>) without increasing the number of nodes and the computation time. Moreover, several convergence problems which can be found for many kinds of simulations have been resolved.
In this paper, insulated gate bipolar transistor (IGBT) models in the literature are reviewed, analyzed, and classified in different categories. We compare unicellular and multicellular modeling for the hard-switching between finite elements electro-thermal simulations applied on a silicon power transistor and we show the advantages of multicellular(More)
The main contribution of this work consists in showing the possibility to use the Cyclotene 4026-46 BCB (BenzoCycloButen) resin in thick layer to realize Deep Trench Termination (DT<sup>2</sup>). The development of the DT<sup>2</sup> in power devices strongly depends on its reliability. 2D finite elements simulations were used to determinate the electrical(More)
Eutectic AuSn solder is increasingly used in high reliability and/or high temperature applications where conventional Pb-free solders exhibit insufficient strength, creep resistance, thermal conductivity, and resistance to corrosion. Excessive void presence and growth and irregular phase formation are critical factors governing the solder joint reliability(More)
Article history: Received 24 May 2015 Received in revised form 22 June 2015 Accepted 2 July 2015 Available online xxxx Mechanical residual stress after technological process has been investigated on 1200 V Deep Trench Termination Diode. The dielectric used to fill the trenches was the BenzoCycloButene (BCB). Four years after the fabrication and storage in a(More)
In this work we studied some possible high voltage MOSFETs structures that can replace the IGBT in the railway traction converters. In this purpose, some high voltage power MOS structures are presented and theoretically compared using 2D simulations. Simulations results show that the DT-UMOSFET should be a good challenger to the 1200 Volts IGBT. Moreover,(More)