L. Piazzon

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This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Cree's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for(More)
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Cree's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for(More)
This contribution presents an innovative solution to drastically increase the output power range in which the Doherty Power Amplifier shows a high and flat efficiency behaviour. The proposed topology and its main theoretical guidelines are shown and discussed. Moreover, the potentialities of the new idea and how it can solve some drawbacks in applications(More)
This contribution highlights how the active device on resistance (R<inf>ON</inf>) can play a significant role in the achievable performances from a Doherty Power Amplifier (DPA). Benefits as well as limitations are stressed comparing two DPAs (DPA<inf>1</inf> and DPA<inf>2</inf>) for X-band applications. Both of them have been realized in the same(More)
In this contribution, the design of an uneven AB-C Doherty power amplifier (DPA) in GaN technology, implementing a Class F configuration for the Main device, is presented. Theoretical support will be given to understand why and how some relevant DPA's design parameters have to be carefully selected when a Class F strategy is adopted. Moreover, a comparison(More)
A GaN-MMIC power module for microwave back-haul applications in C-band frequency range is presented in this contribution. The design is based on a commercial 0.25 &#x03BC;m channel length GaN power process. The module is composed of two stages. The final stage is designed in order to reach 38 dBm of saturated output power with high efficiency and AM/AM(More)
This article is focused on GaN-based power amplifiers for applications up to 10 GHz. Several PAs developed in both MMIC and hybrid technologies for different RF and microwave frequency bands will be described. In particular, the designs of two ultra-wideband (UWB) PAs are reported together with experimental results. The first one is based on commercial(More)
In this paper, a theoretical investigation of the causes of the AM/PM distortion in Doherty Power Amplifiers is presented for the first time. The distortion sources are identified and a solution to mitigate the AM/PM conversion through the input termination of the Carrier amplifier is also highlighted. The relevant analysis is carried out using a simplified(More)