L.M. Lakkimsetti

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Impact of gate dielectric processing [plasma and thermal nitridation, nitrogen total dose, effective oxide thickness (EOT)] on negative-bias temperature instability (NBTI) degradation and recovery is studied. The magnitude, field, and temperature dependence of NBTI is measured using no-delay I<sub>DLIN</sub> method and carefully compared to charge-pumping(More)
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