L. Liszkay

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We apply positron annihilation spectroscopy to identify V(N)-Mg(Ga) complexes as native defects in Mg-doped GaN. These defects dissociate in postgrowth annealings at 500-800 degrees C. We conclude that V(N)-Mg(Ga) complexes contribute to the electrical compensation of Mg as well as the activation of p-type conductivity in the annealing. The observation of(More)
The re-emission yield of ortho-positronium (o-Ps) into vacuum outside mesoporous silica films on glass is measured in reflection mode with a specially designed lifetime (LT) spectrometer. Values as high as 40% are found. The intensity of the 142 ns vacuum LT is recorded as a function of re-emission depth. The LT depth profiling is correlated to the 2γ and(More)
We report on muonium (Mu) emission into vacuum following μ(+) implantation in mesoporous thin SiO(2) films. We obtain a yield of Mu into vacuum of (38±4)% at 250 K and (20±4)% at 100 K for 5 keV μ(+) implantation energy. From the implantation energy dependence of the Mu vacuum yield we determine the Mu diffusion constants in these films: D(Mu)(250(More)
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