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Classical models of chirality are used to investigate the optical rectification effect in chiral molecular media. Calculation of the zero frequency first hyperpolarizabilities of chiral molecules with different structures is performed and applied to the derivation of a dc electric-dipole polarization. The expression of second-order nonlinear(More)
High dose Ge<sup>+</sup> ions were implanted into SIMOX substrates to synthesize SiGe alloys. These samples were evaluated by using RBS channeling and XTEM. The dose of implanted Get effects strongly the density of defects remaining in the surface SiGe layer. At a dose of 1.6&#x000B7;10<sup>16</sup> Ge<sup>+</sup> cm<sup>-2</sup>, SiGe layer with a very(More)
The sum of two normalized Pearson IV distributions has been used for describing the high energy implantation profiles with boron and phosphorus into crystalline silicon. The required range parameters for this description were extracted by fitting them to experimental SIMS-profiles. The number of range parameters can be reduced to five for both of boron and(More)
In the paper, the three-coupled-oscillator model presented by us is used to study the optical rectification in isotropic chiral films. The zero frequency hyperpolarizabilities of chiral molecules with a tripod-like structure are calculated. The expressions of the static-electric polarization and the relations between the optical rectification and the(More)
For the measurement of dopant concentrations in two dimensions (2d), a delineation technique has been optimized. The method yields up to three dopant equiconcentration lines in one sample. The concentrations of these lines can be changed by modification of the etching conditions. This technique is applied to the investigation of 2d ion implantation profiles.
With a novel delineation technique, the increase in dopant concentration due to ions which have been scattered out of a vertical mask edge during ion implantation was demonstrated. The equiconcentration lines show that the implanted concentration near the mask edge is greater than that in the middle of the implantation window. This effect could be simulated(More)
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