L. Giguerre

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We present measurements of GIDL at various temperatures and terminal biases. Besides band-to-band (BBT) tunneling leakage observed at high drain-to-gate voltage V/sub DG/, we also observed trap-assisted-tunneling (TAT) leakage currents at lower V/sub DG/. Based on ISE TCAD simulations of the electric field, we propose analytical models for BBT and TAT GIDL(More)
Ultra-low noise and HF performances of Si/SiGe nand Ge/SiGe p-MODFETs are presented and compared. A 130 nm n-MODFET yield de-embedded data like fT = 49 GHz, fMAX = 60 GHz, gmmax = 715 mS/mm and NFmin = 0.3 dB at 2.5 GHz. A 100nm p-MODFET gave fT = 55 GHz, fMAX = 135 GHz, gmmax = 250 mS/mm, and NFmin = 0.5 dB at 2.5 GHz.
Self heating is investigated in InP/InGaAs DHBT’s, a transistor technology well suited for 40 Gb/s IC’s. An original approach associates experiments and simulations. InP DHBT’s are shown to heat up even if their I-V characteristics do not present a negative differential output conductance as GaAs HBT’s do. Their thermal resistance was found in the same(More)
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