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In this work, we study electronic and conduction properties of a single AlN barrier (thickness from 0.5 to 5nm) embedded in GaN. The electronic structure was simulated using a self-consistent Schrödinger–Poisson solver, and verified by photoluminescence (PL) measurements. For 0.5and 1-nm-thick barriers, we can identify the PL line related to recombination(More)
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