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Variable magnetic field Hall measurements were performed to investigate the electrical properties in In<sub>0.52</sub>Al<sub>0.48 </sub>As/In<sub>0.65</sub>Ga<sub>0.35</sub>As metamorphic high electron mobility transistors (MMHEMTs) on GaAs substrate at the temperature range from 4 to 100 K. The Shubnikov-de Hass (SdH) measurement shows the two-dimensional(More)
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