L. Buckle

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We present high-field magnetotransport data from a range of 30-nm-wide InSb/InAlSb quantum wells with room-temperature mobilities in excess of 6 m 2 V −1 s −1. Samples with the narrowest Landau level broadening exhibit beating patterns in the magnetoresistance attributed to zero-field spin splitting. Rashba parameters are extracted from a range of samples(More)
We have used two-color time-resolved spectroscopy to measure the relaxation of electron spin polarizations in a bulk semiconductor. The circularly polarized pump beam induces a polarization either by direct excitation from the valence band, or by free-carrier (Drude) absorption when tuned to an energy below the band gap. We find that the spin relaxation(More)
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