Kyungsoo Jang

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We showed well-aligned zinc oxide (ZnO) nanorod arrays synthesized using hydrothermal method at atmospheric pressure. The influence of fabrication conditions such as Zn2+/hexamethylentriamin concentration ratio, and growth temperature on the formation of ZnO nanorods was investigated. Scanning Electron Microscope (SEM) images and X-ray Diffraction (XRD)(More)
Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate(More)
0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.08.009 ⇑ Corresponding author. Tel.: +82 31 290 7139; fax E-mail address: (J. Yi). Low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) have a high carrier mobility that enables the design of small devices that offer large currents and(More)
We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have(More)
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