Kyung Joong Kim

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Autonomous cars control the steering wheel, acceleration and the brake pedal, the gears and the clutch using sensory information from multiple sources. Like a human driver, it understands the current situation on the roads from the live streaming of sensory values. The decision‐making module often suffers from the limited range of(More)
Oxygen vacancies (V(O)) have profound effects on the physical and chemical performance of devices based on oxide materials. This is particularly true in the case of oxide-based resistive random access memories, in which memory switching operation under an external electrical stimulus is closely associated with the migration and ordering of the oxygen(More)
The thickness of nanometer Al(2)O(3) films was studied by X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The thickness was determined from mutual calibration of the XPS and TEM measurements. The thickness offset of Al(2)O(3) films was proved to be close to zero by in situ XPS analysis. The thicknesses of a series of(More)
Active doping of B was observed in nanometer silicon layers confined in SiO(2) layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of [SiO(2) (8 nm)/B-doped Si(10 nm)](5) films turned out to be segregated into the Si/SiO(2)(More)
Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si(More)
Wet-chemical etching of the barrier oxide layer of anodic aluminum oxide (AAO) was systematically investigated by using scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), and a newly devised experimental setup that allows accurate in situ determination of the pore opening point during chemical etching of the barrier oxide layer. We(More)
Silicon nanoclusters have become significant research interest due to their potential application to optoelectronic devices in visible range. We investigate the electronic and optical properties of hydrogenated and nitrogen-passivated silicon nanoclusters using density functional theory calculations. The energy gap between the highest occupied molecular(More)
Triple-layer structures of SiO2/Zr nanodots (NDs)/SiO2 for nonvolatile memories have been firstly fabricated at room temperature by using ion beam sputtering deposition (IBSD). High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy demonstrate that Zr NDs self-assembled between the SiO2 layers by IBSD are changed into ZrO2 NDs(More)
1-5 period multilayers of Ge nanodots (NDs) for nonvolatile memories have been self-assembled by ion beam sputtering deposition of an ultra-small amount of Ge between SiO(2) layers at room temperature without post-annealing. High-resolution transmission electron microscopy demonstrates the existence of Ge ND layers well defined with respect to the SiO(2)/Si(More)