Kyu-Ok Lee

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NGN(Next-Generation Network) structure has been considered from various points of view as all IP wire/wireless integration network, based on all optical backbone network in general. In this research, the mid-term and long-term strategies of view on NGN were explained, as well as wire/wireless network integration, trends of standardization protocols, access(More)
Flicker (1/f) noise and TCR are compared for arsenic- and phosphorus-doped polysilicon in a 0.18 μm CMOS base technology. Resistors implanted with arsenic exhibit about 4 times higher noise than with phosphorus at the same dose and thermal budget. The TCR of arsenic-doped polysilicon is negative, near -1065 ppm/K, while that of phosphorus-doped(More)
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