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New Power MOSFET Employing Segmented Trench Body Contact for Improving the Avalanche Energy
We have fabricated the 60 V power MOSFET employing the segmented trench body contact which results in low conduction loss and high avalanche energy (EAS) under undamped inductive switching (UIS)
Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement
Abstract We proposed the AlGaN/GaN high electron mobility transistors (HEMTs) employing the mesa field plate and carried out the detailed numerical simulation of device operation using ISE-TCAD. The
Increase of Breakdown Voltage on AlGaN/GaN HEMTs by Employing Proton Implantation
The breakdown voltage of new AlGaN/GaN high electron mobility transistors (HEMTs) was increased considerably without sacrificing any other electrical characteristics by proton implantation. The
A New Soft Self-Clamping Scheme for Improving the Self-Clamped Inductive Switching (SCIS) Capability of Automotive Ignition IGBT
The improvement of self-clamped inductive switching (SCIS) capability of ignition IGBT widely used in automotive coil driver ensures the protection of the ignition IGBT from a severe thermal stress
High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate
AlGaN/GaN HEMTs employing a tapered field plate, which decreases the gate leakage current and improves the breakdown voltage without any sacrifice of the forward electrical characteristics were
1.4 kV AlGaN/GaN HEMTs employing As+ ion implantation on SiO2 passivation layer
We proposed As+ ion implantation on SiO2 passivation layer of AlGaN/GaN HEMTs to improve the forward and reverse electric characteristics of AlGaN/GaN HEMTs. SiO2 passivation layer which was applied
High breakdown voltage AlGaN/GaN HEMTs employing fluoride plasma treatment
We proposed channel-modulated AlGaN/GaN high electron mobility transistors (HEMTs) employing fluoride plasma treatment and carried out a detailed numerical simulation of device operation using ISE
AlGaN/GaN high-electron-mobility transistor(HEMT) employing Schottky contact on the unetched region and the silicon dioxide passivation
AlGaN/GaN high-electron-mobility transistors (HEMTs) which have the Schottky contact only formed on the unetched region and the SiO2 passivation using an inductively coupled chemical vapor deposition
High voltage AlGaN/GaN Schottky barrier diode employing the inductively coupled plasma-chemical vapor deposition SiO2 passivation
The SiO2 passivation using the inductively coupled plasma-chemical vapor deposition(ICP-CVD) was proposed for the high voltage AlGaN/GaN Schottky barrier diode(SBD). The ICP-CVD is well known for the
Channel modulated AlGaN/GaN HEMTs employing fluoride plasma treatment
We proposed channel modulated AlGaN/GaN high electron mobility transistors (HEMTs) employing fluoride plasma treatment and carried out the detailed numerical simulation of device operation using
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