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This paper presents a new model for the statistical analysis of the impact of Random Telegraph Noise (RTN) on circuit delay. This RTN-aware delay model have been developed using Pseudo RTN based on a Markov process with RTN statistical property. We have also measured RTN-induced delay fluctuation using a circuit matrix array fabricated in a 65nm process.(More)
A new current-compensation circuit system for VRM is proposed. The proposed circuit consists of MOSFETs, resistors and capacitors without any discrete magnetic devices. It works during only term of transient response and total power loss is very small. From the simulation result, it is revealed that the output voltage of the VRM has fitted in 5 % of 1.5 V(More)
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