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This work reports on a mechanism for irreversible resistive switching (RS) transformation from bipolar to unipolar RS behavior in SrRuO3 (SRO)/Cr-doped SrZrO3 (SZO:Cr)/Pt capacitor structures prepared on a Ti/SiO2/Si substrate. Counter-clockwise bipolar RS memory current-voltage (I-V) characteristics are observed within the RS voltage window of -2.5 to +1.9(More)
Resistance switching phenomena in an amorphous Ni-Ti-O film were investigated. Very clear bipolar resistive switching characteristics were observed with good reproducibility. Stable retention and on/off pulse switching operation was demonstrated. An analysis of x-ray photoelectron spectroscopy of the Ni-Ti-O film provided a clue that the observed unusual(More)
We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality,(More)
Pt/Cr-doped SrZrO<sub>3</sub>/SrRuO<sub>3</sub> metal-oxide-metal (MOM) structures were fabricated by off-axis rf sputtering for nonvolatile memory applications. The MOM structures showed reproducible and bistable resistive switching behaviors. From the low-temperature I-V measurements, it was found that the low-resistance state (LRS) was governed by ohmic(More)
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