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We report on transport measurements of an InAs nanowire coupled to niobium nitride leads at high magnetic fields. We observe a zero-bias anomaly (ZBA) in the differential conductance of the nanowire for certain ranges of magnetic field and chemical potential. The ZBA can oscillate in width with either the magnetic field or chemical potential; it can even(More)
This work reports on a mechanism for irreversible resistive switching (RS) transformation from bipolar to unipolar RS behavior in SrRuO3 (SRO)/Cr-doped SrZrO3 (SZO:Cr)/Pt capacitor structures prepared on a Ti/SiO2/Si substrate. Counter-clockwise bipolar RS memory current-voltage (I-V) characteristics are observed within the RS voltage window of -2.5 to +1.9(More)
Semiconducting nanowires have attracted lots of attention because of their potential applications. Compared with free-standing nanowires, self-aligned planar nanowires grown epitaxially on the substrate have shown advantageous properties such as being twin defect free and ready for device fabrication, opening potentials for the large-scale device(More)
Ultrathin InAs nanowires (NWs) can enable true one-dimensional electronics. We report a growth phenomenon where a bimodal size distribution (∼ α nm and ∼ 5 nm in diameter) of InAs NWs can be achieved from gold (Au) nanoparticles of a single size, α (α = 50-250 nm). We determine that ultrathin InAs NW growth is seeded by ultra-small Au nanoparticles shed(More)
The effect of diameter variation on electrical characteristics of long-channel InAs nanowire metal-oxide-semiconductor field-effect transistors is experimentally investigated. For a range of nanowire diameters, in which significant band gap changes are observed due to size quantization, the Schottky barrier heights between source/drain metal contacts and(More)
We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality,(More)
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