Kyeong-Sik Min

Learn More
A new Row-by-Row Dynamic Source-line Voltage control (RRDSV) scheme is proposed to reduce the active leakage as well as the stand-by leakage in SRAM. By dynamically controlling the source-line voltage of cells row by row, the cell leakage through inactive cells can be reduced by two orders of magnitude. Moreover, the bit-line leakage through pass(More)
A new Row-by-Row Dynamic Source-line Voltage control (RRDSV) scheme is proposed to reduce the active leakage as well as the stand-by leakage in SRAM. By dynamically controlling the source-line voltage of cells row by row, the cell leakage through inactive cells can be reduced by two orders of magnitude. Moreover, the bit-line leakage through pass(More)
In this paper, a neuromorphic crossbar circuit with binary memristors is proposed for speech recognition. The binary memristors which are based on filamentary-switching mechanism can be found more popularly and are easy to be fabricated than analog memristors that are rare in materials and need a more complicated fabrication process. Thus, we develop a(More)
—In this paper, we propose a new memristor-based crossbar array architecture, where a single memristor array and constant-term circuit are used to represent both plus-polarity and minus-polarity matrices. This is different from the previous crossbar array architecture which has two memristor arrays to represent plus-polarity and minus-polarity connection(More)
In this paper, a CMOS emulator circuit that can reproduce nanoscale memristive behavior is proposed. The proposed emulator circuit can mimic the pinched hysteresis loops of nanoscale memristor memory's current-voltage relationship without using any resistor array, complicated circuit blocks, etc. that may occupy very large layout area. Instead of using a(More)
In this paper, we compare 4 SRAM circuits. They are the conventional 'SRAM1', 'SRAM2' with power switches on VSs line, 'SRAM3' with switches on VDD line, and 'SRAM4' with switches on VDD and Vss lines, respectively. Among 4 SRAMs, SRAM2 shows the smallest amount of leakage, because its subthreshold leakage is most suppressed by its BODY and DIBL effects. To(More)
Cellular Neural Network (CNN) that can provide parallel processing in massive scale is known suitable to neuromorphic applications such as vision systems. In this paper, we propose a new synaptic weighting circuit that can perform analog multiplication for CNN applications. The common-mode feedback is used in the new weighting circuit to minimize the output(More)