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We made a numerical study on the deformation of a viscoelastic polymethyl methacrylene (PMMA) resist when a rigid SiO2 stamp with a rectangular line pattern is imprinted into the PMMA resist for thermal nano-imprint lithography (NIL). The stress distribution in the polymer resist during the molding process is calculated by a finite element method (FEM). Our(More)
In this paper, we discuss the breakdown characteristics of an LDMOSFET (Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor) structure for the optimization of engineering parameters such as the gap between the DEEP N-WELL and the source region and the doping concentration of the N(ADJUST)-layer. The fabricated device exhibits the(More)
In this paper, we present a finite element method (FEM) study of space charge effects in organic light emitting diodes. Our model includes a Gaussian density of states to account for the energetic disorder in organic semiconductors and the Fermi-Dirac statistics to account for the charge hopping process between uncorrelated sites. The physical model cover(More)
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