Kwang-pyuk Suh

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Novel high-k MIM capacitor technology for mixed-signal/RF applications has been successfully developed by introducing multilayered high-k dielectric(Ta/sub 2/O/sub 5//HfO/sub 2//Ta/sub 2/O/sub 5/)(More)
Ultra low power CMOS 6T-SRAM chips with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate gate dielectric were successfully demonstrated (bit-cell size=2.14 /spl mu/m/sup 2/). Equivalent oxide thickness (EOT) of(More)