Kwang Soo Hyun
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The electrical conduction properties of 10-nm-thick atomic-layer deposited Al2O3 thin films with Al bottom and Pt top electrodes were characterized for use in field emission display. The as-deposited… Continue Reading
HfO2 thin films were deposited on Si wafers using an atomic layer deposition technique at temperatures ranging from 200 to 400 °C with HfCl4 as the precursor and H2O as the oxidant. The… Continue Reading
HfO2 thin films were deposited on SiNx-passivated Si wafers at 300 and 400 °C using an atomic-layer-deposition technique. The SiNx films were deposited by another atomic-layer-deposition process at… Continue Reading
HfO2/Al2O3 gate dielectric thin film stacks were deposited on Si wafers using the atomic layer deposition technique. A 3.3-nm-thick Al2O3 interlayer was grown at 400 °C using Al(CH3)3 and O3, and… Continue Reading