Kuo-Liang Yeh

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Layout dependent stress in 90 nm MOSFET and its impact on high frequency performance and flicker noise has been investigated. Donut MOSFETs were created to eliminate the transverse stress from shallow trench isolation (STI). Both NMOS and PMOS can benefit from the donut layout in terms of higher effective mobility &#x03BC;<inf>eff</inf> and cutoff frequency(More)
The impact of narrow width effects on high frequency performance parameters like f<sub>T</sub>, f<sub>MAX</sub>, and RF noise in 35nm multi-finger n-MOSFETs is investigated in this paper. Multi-OD devices with extremely narrow width and fixed finger number (N<sub>F</sub>) reveal higher R<sub>g</sub> and C<sub>gg</sub>, which lead to the penalty in(More)
The uni-axial compressive strain from e-SiGe S/D combined with dynamic body biases effect on flicker noise of pMOSFETs is presented in this paper. This compressive strain contributes higher mobility but the worse flicker noise in terms of higher S<inf>ID</inf>/I<inf>D</inf><sup>2</sup> becomes a potential killer to RF/analog circuits. Forward body biases(More)
We report a new and efficient ruthenium-catalyzed reaction that transforms ethynyl alcohol into alkene and carbon monoxide. The most efficient catalysts are TpRu(PPh3)(CH3CN)2PF6 (10 mol %) and lithium triflate (20 mol %). The mechanism of this reaction was elucidated using an isotope-labeling experiment.
TpRuPPh(3)(CH(3)CN)(2)PF(6) catalyzed the transformation of various 3-benzyl but-1-ynyl ethers into dienes and benzaldehyde at a catalyst loading of 5 mol %. This process represents an atypical pattern of transfer hydrogenation. This catalytic reaction can be applied to various derivatives of 2-ethynyl tetrahydrofurans and pyrans to cleave their ether rings(More)
We report a ruthenium-catalyzed reaction for various 3-benzyl but-1-ynyl ethers with suitable functionalities. Treatment of these substrates with TpRu(PPh3)(CH3CN)2PF6 (8.0 mol %) catalyst in 1,2-dichloroethane (80 degrees C, 12 h) afforded functionalized 1,3-dienes and benzyl aldehyde in good yields. This process is considered to be a tandem dealkoxylation(More)
The impact of uniaxial strain on flicker noise and random telegraph noise (RTN) was investigated in frequency and time domains, respectively. Both control and SiC strained nMOS reveal flicker noise dominated by number fluctuation model but the latter one with uniaxial strain suffers significantly higher noise. RTN measured from SiC strained nMOS features a(More)
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