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The self-heating effects in Bulk/SOI FinFETs have been systematically investigated and compared. It is demonstrated that lattice temperature is significantly lower in Bulk FinFETs owing to the larger heat dissipation to the Si substrate. Heat dissipation paths in Bulk/SOI FinFETs have been studied and the device-parameter dependence of thermal(More)
Carrier transport in heavily doped extremely thin silicon- on-insulator (ETSOI) diffusion layers with SOI thickness of less than 10 nm was thoroughly studied. We found that electron mobility ( &#x00B5;<inf>e</inf>) in heavily doped ETSOI diffusion layer is totally different from &#x00B5;<inf>e</inf> in heavily doped bulk Si. In ETSOI diffusion layers with(More)
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