Kuniyuki Kakushima

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This paper reports on the control of the direct-contact La-silicate/Si interface structure with the aim of achieving scaled equivalent oxide thickness (EOT) and small interface state density. The(More)
In this letter, a high-k composite oxide composed of La<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> is investigated for n-In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor (MOS)(More)
We fabricated Si nanowire (NW) nFETs, and used them to experimentally demonstrate the superior noise properties of 3D MOSFETs. By carefully comparing the NWFETs with planar FETs, we found that it was(More)