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AlGaN/GaN high electron mobility transistors (HEMTs) were developed for X-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 11.52 mm gate periphery exhibits output power of over 81.3W with a power added(More)
AlGaN/GaN high electron mobility transistors (HEMTs) were developed for Ku-band applications. The operating voltage characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 12 mm gate periphery exhibits output power of over 30 W with a power added efficiency (PAE) of 12% under VDS = 30 V, CW(More)
In this paper, a finishing system with a mounted abrasive tool is proposed for finishing of metallic molds. The shape of the mounted abrasive tool is a ball-end type. When a metallic mold with curved surface is polished, the orientation of the mounted abrasive tool is not only fixed but also its revolution is locked. The motion of the mounted abrasive tool(More)
In this paper, a high precision polishing robot with a learning-based hybrid position/force controller is proposed for polishing PET (Poly Ethylene Terephthalate) bottle molds. In polishing, the position control system loosely interferes with the force control system in suitable directions. The shape of a mounted abrasive tool, attached to the tip of a(More)
Cutter location (CL) data with normal vectors can be used for not only a desired trajectory of tool's translational motions but also a desired force direction for molds. In this paper, such normalized tool vectors from 3-axis CL data are generated for a polishing robot. The resultant CL data allow the polishing robot based on an industrial robot to realize(More)
This paper reports 13.56 MHz and 27.1 MHz class-E amplifiers with a high voltage GaN-HEMT as the main switching device showing the possibility of GaN-HEMTs in high frequency switching power applications such as RF power-supply applications. The 380 V/1.9 A GaN power-HEMT was designed and fabricated for high-voltage power electronics applications. The(More)
An i-AlGaN/GaN HFET structure with two different depth-recesses formed in the i-AlGaN layer is proposed for application to a 1.9 GHz SPDT switch. In the HFET structure, an ohmic contact is formed in the deep recess to reduce the contact resistance, and a Schottky gate is formed in the shallow recess to decrease the leakage current. The off-state capacitance(More)