Kunigunde Cherenack

Learn More
Hydrogenated amorphous-silicon ͑a-Si: H͒ thin-film transistors ͑TFTs͒ have been fabricated on clear plastic with highly stable threshold voltages. When operated at a gate field of 2.5 ϫ 10 5 V / cm, the threshold voltage shift extrapolated to only ϳ1.2 V after ten years. This stability is achieved by a high deposition temperature for the gate silicon(More)
—We have made hydrogenated amorphous-silicon thin-film transistors (TFTs) at a process temperature of 300 • C on free-standing clear-plastic foil substrates. The key to the achievement of flat and smooth samples was to design the mechanical stresses in the substrate passivation and transistor layers, allowing us to obtain functional transistors over the(More)
—We have fabricated active-matrix organic light emit-7 ting diode (AMOLED) test arrays on an optically clear high-8 temperature flexible plastic substrate at process temperatures as 9 high as 285 • C using amorphous silicon thin-film transistors (a-Si 10 TFTs). The substrate transparency allows for the operation of 11 AMOLED pixels as bottom-emission(More)
We report amorphous silicon thin film transistors (a-Si TFT's) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the luminance half-life of high-quality green phosphorescent OLED's, showing that the TFT's are promising for(More)
— The direct voltage programming of active-matrix organic light-emitting-diode (AMOLED) pixels with n-channel amorphous-Si (a-Si) TFTs requires a contact between the driving TFT and the OLED cathode. Current processing constraints only permit connecting the driving TFT to the OLED anode. Here, a new " inverted " integration technique which makes the direct(More)
—The transition of thin-film transistor (TFT) back-planes from rigid plate glass to flexible substrates requires the development of a generic TFT backplane technology on a clear plastic substrate. To be sufficiently stable under bias stress, amorphous-silicon (a-Si:H) TFTs must be deposited at elevated temperatures, therefore the substrate must withstand(More)
In most cases authors are permitted to post their version of the article (e.g. in Word or Tex form) to their personal website or institutional repository. Authors requiring further information regarding Elsevier's archiving and manuscript policies are encouraged to visit: a b s t r a c t Various companies are industrializing 'photonic' textiles for medical(More)
We have made a-Si:H TFTs at a process temperature of 300 C on free-standing clear plastic foil substrates and have improved the large-area alignment of TFT device layers. The key to achieving at and crack-free samples is to design the mechanical stresses in the substrate passivation and transistor layers, allowing us to obtain functional transistors over(More)
In Active Matrix Organic Light Emitting Diode (AMOLED) displays, a voltage data signal is converted in the pixel to an OLED driving current (and thus brightness) by a FET. Typically p-channel FET's are used, because with conventional " bottom-anode (ITO) " OLED's, only p-channel devices allow the direct programming of the FET gate-source voltage (and thus(More)