Kunigunde Cherenack

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We report amorphous silicon thin film transistors (a-Si TFT’s) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the luminance half-life of high-quality green phosphorescent OLED’s, showing that the TFT’s are promising for(More)
We have made a-Si:H TFTs at a process temperature of 300 C on free-standing clear plastic foil substrates and have improved the large-area alignment of TFT device layers. The key to achieving at and crack-free samples is to design the mechanical stresses in the substrate passivation and transistor layers, allowing us to obtain functional transistors over(More)
We previously demonstrated highly stable backchannel cut and back-channel passivated amorphous silicon thin-film transistors (a-Si:H TFTs) made at 300C on 2.9-inch x 2.9-inch clear plastic substrates [1]. Mechanical stress in the TFT stack causes the substrate to expand or contract, which easily results in misalignment between consecutive device layers(More)
We have made hydrogenated amorphous-silicon thin-film transistors (TFTs) at a process temperature of 300 ◦C on free-standing clear-plastic foil substrates. The key to the achievement of flat and smooth samples was to design the mechanical stresses in the substrate passivation and transistor layers, allowing us to obtain functional transistors over the(More)
We have fabricated active-matrix organic light emit7 ting diode (AMOLED) test arrays on an optically clear high8 temperature flexible plastic substrate at process temperatures as 9 high as 285 ◦C using amorphous silicon thin-film transistors (a-Si 10 TFTs). The substrate transparency allows for the operation of 11 AMOLED pixels as bottom-emission devices,(More)
A promising approach to fabricating elastic electronic systems involves processing thin film circuits directly on the elastic substrate by standard photolithography. Thin film devices are generally placed onto stiffer islands on the substrate surface to protect devices from excessive strain while still achieving a globally highly deformable system. Here we(More)
The transition of thin-film transistor (TFT) backplanes from rigid plate glass to flexible substrates requires the development of a generic TFT backplane technology on a clear plastic substrate. To be sufficiently stable under bias stress, amorphous-silicon (a-Si:H) TFTs must be deposited at elevated temperatures, therefore the substrate must withstand high(More)
Bahman Hekmatshoar Alex Z. Kattamis Kunigunde Cherenack Sigurd Wagner James C. Sturm Abstract — The direct voltage programming of active-matrix organic light-emitting-diode (AMOLED) pixels with n-channel amorphous-Si (a-Si) TFTs requires a contact between the driving TFT and the OLED cathode. Current processing constraints only permit connecting the driving(More)