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Compensated Semimetal LaSb with Unsaturated Magnetoresistance.
By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibitsExpand
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The Investigation of an IGBT With Hole-Carrier Movement Control
A novel hole-controlled lateral-insulated-gate bipolar transistor (HC-LIGBT) device that is free of tail current is proposed and investigated. The device utilizes a poly-p-i-n-diode as the fieldExpand
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Fabrication and Investigation of a Lateral Insulated Gate-Bipolar-Transistor With Ultrafast Turn-Off Speed
  • J. Li, Yu Tang, +4 authors Wei Li
  • Materials Science
  • IEEE Electron Device Letters
  • 10 February 2020
A hole-controlled lateral insulated gate bipolar transistor (HC-LIGBT) device with an ultrafast turn-off speed is investigated and experimentally demonstrated. Utilizing a high-permittivity materialExpand