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Compensated Semimetal LaSb with Unsaturated Magnetoresistance.
By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits… Expand
The Investigation of an IGBT With Hole-Carrier Movement Control
- J. Li, K. Xiao, B. Hu, K. Liu, Rongzhou Zeng
- IEEE Transactions on Electron Devices
- 1 September 2018
A novel hole-controlled lateral-insulated-gate bipolar transistor (HC-LIGBT) device that is free of tail current is proposed and investigated. The device utilizes a poly-p-i-n-diode as the field… Expand
Fabrication and Investigation of a Lateral Insulated Gate-Bipolar-Transistor With Ultrafast Turn-Off Speed
A hole-controlled lateral insulated gate bipolar transistor (HC-LIGBT) device with an ultrafast turn-off speed is investigated and experimentally demonstrated. Utilizing a high-permittivity material… Expand