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We present the design, fabrication and characterization of athermal nano-photonic silicon ring modulators. The athermalization method employs compensation of the silicon core thermo-optic contribution with that from the amorphous titanium dioxide (a-TiO(2)) overcladding with a negative thermo-optic coefficient. We developed a new CMOS-compatible fabrication… (More)
We investigate the athermal characteristics of silicon waveguides clad with TiO(2) designed for 1.3 µm wavelength operation. Using CMOS-compatible fabrication processes, we realize and experimentally demonstrate silicon photonic ring resonators with resonant wavelengths that vary by less than 6 pm/°C at 1.3 µm. The measured ring resonance wavelengths across… (More)
We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed… (More)
We have developed a simple and scalable graphene patterning method using electron-beam or ultraviolet lithography followed by a lift-off process. This method, with the merits of: high pattern resolution and high alignment accuracy, being free from additional etching or harsh processes, being universal to arbitrary substrates, and being compatible to Si… (More)
We demonstrate static and dynamic optical arbitrary waveform generation in a heterogeneously integrated Si3N4 AWG-InP modulator array-Si3N4 AWG chip-scale module. High contrast Si3N4 AWGs and nearly pure phase InP modulation provided high fidelity OAWG.
We experimentally demonstrate 16 channel-50 GHz arrayed waveguide gratings (AWG) on Si 3 N 4 for DWDM applications. The device achieves 1.8 dB loss,-20 dB crosstalk, phase errors below ± π 10 on a 3.7×0.7 mm 2 footprint.
We discuss titanium dioxide material development for CMOS compatible fabrication and integration of athermal silicon photonic components. Titanium dioxide overclad ring modulators achieved athermal operation (< 0.2 GHz/ o C). 1. Introduction In recent years, the development of high quality optical cladding material with strong negative thermo-optic… (More)
—We present design, fabrication and measurement of athermal silicon ring modulators fabricated on a SOI platform, overclad with 830nm thick amorphous titanium dioxide. Current injection achieves 35 dB extinction intensity modulation.
We discuss the design and demonstration of highly efficient 1.55 µm hybrid III-V/Silicon semiconductor optical amplifiers (SOA). The optimized III-V wafer stack consists of Al(0.10)In(0.71)Ga(0.18)As multiple quantum wells (MQW) and Al(0.48)In(0.52)As electron stop layers to realize SOAs with high wall-plug efficiency (WPE). We present various designs and… (More)
We design Si3N4 tri-layer vertical Y-junction with arbitrary splitting ratio and low reflection, fabricate bi-layer asymmetric vertical coupler, and demonstrate tri-layer vertical Y-junction with splitting ratio of 1:1 and 3:2 for multilayer photonic integrated circuits.