Kuang Sheng

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Random telegraph noise (RTN) has recently become an important issue in advanced circuit performance. It has also recently been used as a tool for gate dielectric defect profiling. In this work, we show that the widely accepted model thought to govern RTN behavior cannot be used to describe our experimental observations. The basis of this model (charge(More)
Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBT’s at temperatures below the maximum junction temperature when operated at high frequency at well below(More)
A simple method for fabricating vertically stacked single-crystal silicon nanowires on standard bulk silicon wafers is presented. The process uses inductively coupled plasma (ICP) etching to create silicon fins with uneven yet controllable vertical profiles. The fins are then thermally oxidized in a self-limiting process, and the narrow regions are(More)
A latest developed normally-off SiC JFETs has been characterized under static and dynamic operating conditions. Two application oriented inverter circuits were constructed for additional tests under and soft- and hard-switching conditions. The single-phase soft-switching inverter was running at 100 kHz, and the three-phase hard-switching inverter was(More)
This paper presents a new composite soft-switching configuration for single-phase inverters where power bridge leg modules are used. The presented configuration consists of only one inductor and one capacitor as well as two low-power-rated switches/diodes for full-bridge circuits. It can realize snubber functions and/or resonant zero-current switching at(More)
Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefore highly desirable. However, it has long been a common believe that the gate oxide breakdown reliability is(More)
This paper reports the status and recent progress in development of a 100kW variable bi-directional DC-DC converter with input voltage ranging from 200 to 300Vdc, output voltage ranging from 300 to 600Vdc, a total efficiency > 95%, a power density > 4kW/liter, and a specific power density > 4kW/kg with a high coolant temperature of > 90C. Multiple(More)