Kuan Yew Cheong

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An ultrathin RF-magnetron sputtered Al2O3 gate on GaN subjected to postdeposition annealing at 800 °C in O2 ambient was systematically investigated. A cross-sectional energy-filtered transmission electron microscopy revealed formation of crystalline Al2O3 gate, which was supported by X-ray diffraction analysis. Various current conduction mechanisms(More)
Extracted, formulated, and processed natural Aloe vera has been used as an active layer for memory applications. The functional memory device is realized by a bottom-up structure of ITO/Aloe vera/Al in which the Aloe vera is spin-coated after mixing with different concentrations of ethanol (0-80 wt%) and subsequently dried at different temperatures (50-120(More)
This study describes a novel fabrication technique to grow gold nanoparticles (AuNPs) directly on seeded ZnO sacrificial template/polymethylsilsesquioxanes (PMSSQ)/Si using low-temperature hydrothermal reaction at 80°C for 4 h. The effect of non-annealing and various annealing temperatures, 200°C, 300°C, and 400°C, of the ZnO-seeded template on AuNP size(More)
A systematic investigation was carried out by incorporating an ultrathin aluminum oxide (Al2O3) as an interlayer between yttrium oxide (Y2O3) passivation layer and GaN substrate. The sandwiched samples were then subjected to postdeposition annealing in oxygen ambient from 400 to 800 °C. The Al2O3 interlayer was discovered to play a significant role in(More)
Given the enormous importance of Au nanoparticles (NPs) deposition on Si substrates as the precursor for various applications, we present an alternative approach to deposit Au NPs on linker-free n- and p-type Si substrates. It is demonstrated that, all conditions being similar, there is a significant difference between densities of the deposited NPs on both(More)
Nonvolatile-memory characteristics of a metal–oxide–semiconductor (MOS) capacitor are presented, for the first time, in this paper. The MOS capacitors have been fabricated on N-type 4H SiC substrate with nitrided oxide–semiconductor interface. The charge-retention time is in the order of 30,000 years, as determined by thermally activated (200335C)(More)
A mechanism regarding the redox reaction in lanthanum cerium oxide (LaxCeyOz) post-deposition annealed in reducing and oxidizing atmosphere was schematized and discussed in association with the presence of lanthanum as a substitutional cation. Analyses have been performed using X-ray diffraction, energy-filtered transmission electron microscopy, scanning(More)