Krzesimir Szkudlarek

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This work presents results of investigations of lateral and vertical Schottky diodes based on Molecular Beam Epitaxy (MBE) grown GaN/AlGaN heterostructures. We have used plasma assisted molecular beam epitaxy in metal rich conditions on freestanding GaN commercial substrates and GaN/sapphire heterosubstrates. The optimized technological procedures have been(More)
An overview of recent results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular, the research on the dynamic range of these detectors is described and two different technologies GaAs and GaN are compared. As a conclusion, we will show first real world applications of the plasma field(More)
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