Krishnan Ramakrishnan

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Field-Programmable Gate Arrays (FPGAs) have been aggressively moving to lower gate length technologies. Such a scaling of technology has an adverse impact on the reliability of the underlying circuits in such architectures. Various different physical phenomena have been recently explored and demonstrated to impact the reliability of circuits in the form of(More)
Radiation-induced soft errors in combinational logic is expected to become as important as directly induced errors on state elements. Consequently, it has become important to develop techniques to quickly and accurately predict soft-error rates (SERs) in combinational circuits. In this work, we present methodologies to model soft errors in both the device(More)
Degradation of device parameters over the lifetime of a system is emerging as a significant threat to system reliability. Among the aging mechanisms, wearout resulting from Negative Bias Temperature Instability (NBTI) is of particular concern in deep submicron technology generations. While there has been significant effort at the device and circuit level to(More)
Increasing variability not only affects the behavior of contemporary ICs but also their vulnerability to transient error phenomenon especially radiation induced soft errors. Such variations in device parameters are caused by static process variations, dynamic variations in power supply and temperature and slow degradation of individual devices due to(More)
The occupancy of caches has tended to be dominated by the logic bit value '0' approximately 75% of the time. Periodic bit flipping can reduce this to 50%. Combining cache power saving strategies with bit flipping can lower the effective logic bit value '0' occupancy ratios even further. We investigate how Negative Bias Temperature Instability (NBTI) affects(More)
Steep sub-threshold transistors are promising candidates to replace the traditional MOSFETs for sub-threshold leakage reduction. In this paper, we explore the use of Inter-Band Tunnel Field Effect Transistors (TFETs) in SRAMs at ultra low supply voltages. The uni-directional current conducting TFETs limit the viability of 6T SRAM cells. To overcome this(More)
Increasing levels of integration in Field Programmable Gate Arrays, have resulted in high on-chip power densities, and temperatures. The heterogeneity of components and scaled feature sizes in Platform FPGAs have made them vulnerable to various temperature dependent failure mechanisms. Hence, we need to introduce temperature awareness in tackling such(More)
Fabricating circuits that employ ever-smaller transistors leads to dramatic variations in critical process parameters. This in turn results in large variations in execution/access latencies of different hardware components. This situation is even more severe for memory components due to minimum-sized transistors used in their design. Current design(More)
Mitigating the circuit aging effect in digital circuits has become a very important concern for current and future technology nodes. Negative Bias Temperature Instability (NBTI) is one of the most important circuit aging mechanisms, which can incur timing errors. Flip-flops play a vital role as storage elements in pipelined architectures and are prone to(More)