Kresimir Furic

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Silicon epitaxial wafers, consisting of 280 μm thick n-type substrate layer and 4–5 μm thick epi-taxial layer, were electrochemically etched in hydrofluoric acid ethanol solution, to produce porous silicon samples. The resistivity of epitaxial layer was 1 Ω cm, while the substrate was much better conductor with resistivity 0.015 Ω cm. By varying the etching(More)
Thin silicon rich nitride (SiN x) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Silane diluted in argon and ammonia were used as the reactant gasses, and the low temperature deposition at 570 °C was used. The films were deposited on silicon (111) substrates. Films with the different values of the nitrogen content were(More)
Silicon-rich oxide (SiO x , 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH 4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100 °C to induce the separation of excess silicon in the SiO x films into nanosized(More)
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