Universal Tunnel Mass and Charge Trapping in <formula formulatype="inline"><tex Notation="TeX">$[( \hbox{SiO}_{2})_{1-x} (\hbox{Si}_{3}\hbox{N}_{4})_{x}]_{1-y}\hbox{Si}_{y}$</tex></formula> FilmHiroshi Watanabe, Daisuke Matsushita, Kouichi Muraoka, Koichi KatoIEEE Transactions on Electron Devices2010Although the tunnel mass is indispensable to predict the gate leakage current of electron devices, it has been regarded as an adjustable parameter to fit the calculated leakage current with theâ€¦ (More)