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—This paper presents a 60-GHz direct-conversion RF front-end and baseband transceiver including analog and digital circuitry for PHY functions. The 65-nm CMOS front-end consumes 319 and 223 mW in transmitting and receiving mode, respectively. It is capable of more than 7-Gb/s 16QAM wireless communication for every channel of the 60-GHz standards, which can(More)
SUMMARY An L-2L through-line de-embedding method has been verified up to millimeter wave frequency. The parasitics of the pad can be modeled from the L-2L through-line. Measurement results of the transmission lines and transistors can be de-embedded by subtracting the parasitic matrix of the pad. Therefore, the de-embedding patterns, which is used for(More)
At 60 GHz, it becomes difficult to achieve a high power added efficiency (PAE) and large output power for CMOS power amplifier (PA). A parallel class-A and AB pseudo Doherty PA is designed in CMOS 65 nm process to obtain a high PAE and large output power. The PA achieves a 9.8-dB gain at 60 GHz. The measured large signal results show that a maximum power(More)
This paper presents a 60 GHz direct-conversion transmitter in 65 nm CMOS technology. The power amplifier consists of 4-stage transistors. The circuit model of de-coupling capacitor is built as a transmission line to consider the physical length. In the measurement results, the conversion gain is above 9.6dB at 58--65GHz band, and the 1 dB compression point(More)
SUMMARY This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor,(More)
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