Konstanze Hild

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Related Articles An investigation of the Young's modulus of single-crystalline wurtzite indium nitride using an atomic force microscopy based micromechanical bending test Appl. Phys. Lett. 101, 221906 (2012) A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100) Appl. Phys. Lett. 101, 212102 (2012) Band-edge(More)
Muhammad Usman,1,* Christopher A. Broderick,1,2 Zahida Batool,3 Konstanze Hild,3 Thomas J. C. Hosea,3,4 Stephen J. Sweeney,3 and Eoin P. O’Reilly1,2 1Tyndall National Institute, Lee Maltings, Dyke Parade, Cork, Ireland 2Department of Physics, University College Cork, Cork, Ireland 3Advanced Technology Institute and Department of Physics, University of(More)
In a similar manner to the dilute nitrides, the incorporation of Bismuth in semiconductors such as GaAs is predicted to lead to a band-anti-crossing effect (in the valence band) causing a large band gap bowing. In addition, the large size of Bismuth atoms gives rise to a large spin-orbit splitting. This opens-up interesting new possibilities for efficient(More)
Related Articles Electronic structure of C2N2X (X=O, NH, CH2): Wide band gap semiconductors J. Appl. Phys. 112, 013537 (2012) In-plane mapping of buried InGaAs quantum rings and hybridization effects on the electronic structure J. Appl. Phys. 112, 014319 (2012) Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal(More)
Related Articles Enhanced efficiency of organic light-emitting devices with metallic electrodes by integrating periodically corrugated structure APL: Org. Electron. Photonics 5, 29 (2012) Enhanced efficiency of organic light-emitting devices with metallic electrodes by integrating periodically corrugated structure Appl. Phys. Lett. 100, 053304 (2012) Effect(More)
GaInAsSb/GaSb based quantum well vertical cavity surface emitting lasers (VCSELs) operating in mid-infrared spectral range between 2 and 3 micrometres are of great importance for low cost gas monitoring applications. This paper discusses the efficiency and temperature sensitivity of the VCSELs emitting at 2.6 μm and the processes that must be controlled to(More)
In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 m. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density.(More)
The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the(More)
We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 lm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM)(More)