Konstantin E. Ponomarev

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Evolution of surface morphology of Ge layers on the Si(111) surface under high-temperature annealing is studied with scanning tunneling and electron microscopies. It is found that the morphology with three-dimensional Ge islands obtained by the Ge deposition at the relatively low temperatures of 450-500 °C transforms into a net of continuous ridges(More)
The surface morphology of Ge layers, obtained by Ge deposition on the Si(100) surface and on the Si(100) surface covered with ultrathin SiO<sub>2</sub> films, is studied with scanning tunneling microscopy. The SiO<sub>2</sub> film is partly decomposed at temperatures above 500 &#x00B0;C and, therefore, it does not prevent the Ge epitaxial growth with(More)
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