Koichi Arai

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Impacts of the 4H-SiC/SiO<sub>2</sub> interface states on the switching operation of power MOSFETs are evaluated. The energy distributions of the interface states are characterized using measured C-V curves of the MOS capacitors with the aid of TCAD simulation. The effect of nitrogen incorporation into the SiC/SiO<sub>2</sub> interface via post-oxidation(More)
developed for use in training of substation maintenance personnel. The simulator allows users to go through a routine inspection procedure involving a variety of operations as they "walk" through a virtual substation. Its principal functions include visual and aural simulation of situations that maintenance personnel may encounter in an actual substation.(More)
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