Kohei Higuchi

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A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage(More)
A 2 μW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage(More)
A novel gas-sealed capacitive pressure sensor with a temperature compensation structure is reported. The pressure sensor is sealed by Au-Au diffusion bonding under a nitrogen ambient with a pressure of 100 kPa and integrated with a platinum resistor-based temperature sensor for human activity monitoring applications. The capacitance-pressure and(More)