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This paper reports an evaluation of a human vibration for autonomous power source that generate an electrical power from human vibration. The actual energy harvesting results from the MEMS (micro electromechanical systems) electret based energy harvester on the human body is also described. The harvester consists of the silicon grid structure,(More)
We herein describe a case of a 17-year-old boy with intractable common warts, short stature, microcephaly and slowly-progressing pancytopenia. Simultaneous quantification of T-cell receptor recombination excision circles (TREC) and immunoglobulin κ-deleting recombination excision circles (KREC) suggested very poor generation of both T-cells and B-cells. By(More)
A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage(More)
Continuous human monitoring is substantially useful to realize a high QoL (quality of life) society. In the previous work, we fabricated a prototype system for monitoring an electrocardiograph (ECG), heart rate (HR), 3 axes human body acceleration, temperature for human body and human circumstances, simultaneously. These data are transmitted to the host PC(More)
Electret materials are useful for electrostatic type energy harvesters. Since the power generated from the electret energy harvester is proportional to the surface charge concentration, i.e. charged voltage on the electret, frequency and dynamic range of the capacitance change. To fabricate the electret, the corona discharge is a very popular charging(More)
A 2 μW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage(More)