Klugman D Krishnamurthy

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We have demonstrated a RLC matched GaN HEMT power amplifier with 12 dB gain, 0.05-2.0 GHz bandwidth, 8 W CW output power and 36.7-65.4% drain efficiency over the band. The amplifier is packaged in a ceramic S08 package and contains a GaN on SiC device operating at 28 V drain voltage, alongside GaAs integrated passive matching circuitry. A second circuit(More)
— We report a broadband lossy matched GaN on SiC HEMT power amplifier MMIC with 15dB gain, 0.5–2.5 GHz bandwidth, 9–13.6 W CW output power and 44.9–63.6% drain efficiency over the band. The amplifier operates from a 48V drain supply and is packaged in a ceramic SO8 package. These amplifiers are intended for use in wideband digital communication applications.
A decade bandwidth 90 W, GaN HEMT push-pull power amplifier has been demonstrated. The power amplifier exhibits 18 dB small-signal gain with 20-1100 MHz 3-dB bandwidth and obtains 82.2-107.5 W CW output power with 51.9-73.8 % drain efficiency and 15.2-16.3 dB power gain over the 100-1000 MHz band. The push-pull power amplifier occupies a 2 x 2 inch PCB area(More)
We have demonstrated a 0.1-1.8 GHz, 100 W GaN HEMT power amplifier module with 11 dB gain, 94-142 W CW output power and 40.6-74.0 % drain efficiency over the band. The power amplifier module uses broadband low loss coaxial baluns to combine four 30 W broadband lossy matched GaN HEMT PAs on a 2 x 2 inch compact PCB. The individual PAs are fully matched to 50(More)
  • Oldham Kt, M Fallat, +46 authors Del
  • 2016
Mason KP. Dexmedetomidine versus morphine infusion following laparoscopic bariatric surgery: effect on supplemental narcotic requirement during the first 24 h. 4. Agbeko RS, Burns JP, Peters MJ. Tools for revealing uncomfortable truths? Measuring child-centred health-related quality of life after paediatric intensive care. Enteral nutrition and(More)
We report an efficient 250 W GaN HEMT power amplifier with 2.1 -2.5 GHz bandwidth. The amplifier employs AlGaN/GaN HEMTs with advanced source connected field plates, which are suitable for 48 V operation. The package combines two 22.2 mm periphery devices to obtain 54.0 dBm output power at 2.14 GHz and 54.6 dBm at 2.5 GHz, under pulsed condition with 10%(More)
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