Kiyoyuki Yokoyama

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An application of fuli Monte Carlo modeling to quarter-micron Si MOSFETs is given Nonstationary carrier transport is shown to dominate in 0.4 pm or less channel devices, with peak velocities exceeding I X lo7 cm/sec. The calculated results agree well with experimental values for a device with 0.15 pm channel length and 2.5 nm gate oxide thickness.
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