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An application of fuli Monte Carlo modeling to quarter-micron Si MOSFETs is given Nonstationary carrier transport is shown to dominate in 0.4 pm or less channel devices, with peak velocities exceeding I X lo7 cm/sec. The calculated results agree well with experimental values for a device with 0.15 pm channel length and 2.5 nm gate oxide thickness.
The current status of semiconductor device simulation at NTT is described. Device simulators at NTT are classified into two categories. One is the conventional macroscopic approach and the other is microscopic particle analysis using a Monte Carlo method. In this paper, these simulators are introduced together with the more interesting results. Through… (More)