Kiyohiko Sakakibara

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This paper analyzes impact of subthreshold hump on bulk-bias dependence of offset-voltage variability σ(ΔVg) in weak and moderate inversion regions. In nanometer scaled MOSFET with STI structure, full suppression of subthreshold hump is difficult. As a result, σ(ΔVg) behavior differs for every wafer also at operation current(More)
This paper analyzes cause of deviation from Pelgrom scaling law in threshold voltage (V<sub>th</sub>) variability of pocket-implanted long channel MOSFET. It has been reported that this deviation from Pelgrom scaling law becomes remarkable in 65nm and beyond technologies. It is clarified that deviation from Pelgrom scaling law is attributed to increasing(More)
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