KimberlyAnnosha Sablon

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We have studied the effects of AlGaAs energy barriers surrounding self-assembled InAs quantum dots in a GaAs matrix on the properties of solar cells made with multiple quantum dot layers in the active region of a photodiode. We have compared the fenced dot samples with conventional InAs/ GaAs quantum dot solar cells and with GaAs reference cells. We have(More)
InAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100), GaAs (100) with a 2° misorientation angle towards [01-1], and GaAs (n11)B (n = 9, 7, 5) substrates. While the substrate misorientation angle increased from 0° to 15.8°, a clear evolution from quantum dots to quantum well was evident by the surface morphology,(More)
Although nanowires have attracted much interest in sensing applications, polymer single nanowires for optical sensing, which promises greater versatility and superior performances, remains unexplored. To date, most of these single nanowire devices have been focused on the electrical conductance change when exposed to the species. However , optical detection(More)
While the properties of individual quantum dots (QDs) are deemed attractive for applications in quantum computing, practically, they are insufficient. However, being able to group QDs to enable communication among them (quantum dot molecules—QDMs) is still extremely challenging although this field has been studied for about 20 years. Therefore, in an(More)
GaAs nano-mounds formed by droplet epitaxy are used as templates for growth of self-assembled InAs quantum dot clusters (QDCs). These QDCs are found to contain an average of thirteen dots per cluster, of which there are two families of different sized quantum dots. Excitation intensity-dependent photoluminescence (PL) demonstrates that there is no lateral(More)
Semiconductor quantum dots have long been described as artificial atoms because they have discrete energy states analogous to the energy levels of natural atoms. In recent years, it has become possible to create coupled pairs of quantum dots that are analogous to natural diatomic molecules. These artificial molecules have received a great deal of attention(More)
Nanohole formation on an AlAs/GaAs superlattice gives insight to both the "drilling" effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets "drill" through the AlAs layer at a(More)
Uses of semiconductor quantum dots (QDs) have been explored for attractive applications such as quantum information processing, lasers and solar cells to name a few. However, their ability to become integrated with existing technologies depends on shape, composition and size, all of which play a role in modifying both the optical and electrical properties(More)