Kien Chaik

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Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines(More)
We report on the radio frequency (RF) sputtering of c-axis oriented ZnO thin films on top of epitaxial 3C-SiC-on-Si (111) substrates, which were then subjected to post-annealing treatment at 400, 600 and 800 ◦C. Grazing incident X-ray Diffraction (XRD) data show that the Full Width Half Maximum (FWHM) values for O2/Ar ratios between 30% and 60% are(More)
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