Kie Hyung Chung

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For thin film fabrication and surface modification, ion sources with high current, low energy, and broad beam are required. The source should be simple and reliable to operate, mechanically rugged, and highly productive for commercial use. To meet these requirements, a Hall effect plasma accelerator has been manufactured and tested. A beam energy of 200-300(More)
The hardness of seven proprietary, light-cured, posterior composite resins was evaluated by three different hardness testers: the Knoop hardness tester, the Barcol indenter and the Rockwell 15T hardness meter. Specimens were measured after light-curing and 24-hour immersion in 37 degrees C water. Barcol hardness numbers ranged from 79.2 to 85.0. The(More)
The growth of epitaxy of silicon–carbon (Si1−yCy) alloy layers on (1 0 0) silicon substrates by chemical vapour deposition (CVD) with a novel precursor, neopentasilane, as the silicon source gas and methylsilane as the carbon source is reported. High quality Si1−yCy alloy layers at growth rates of 18 nm min−1 and 13 nm min−1 for fully substitutional carbon(More)
Chlorine in a nitrogen ambient is used to clean silicon surfaces of impurities by etching a thin layer from the surface prior to silicon epitaxial growth. Silicon etch rates of 1-10 nm/min could be achieved for temperatures from 525C to 575C. The etching of a thin layer of silicon from the surface is also capable of removing phosphorus from the surface,(More)
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