—A novel e-beam free, top-down spacer etch process was used to fabricate sub-hundred nanometer Ge 2 Sb 2 Te 5 phase change nanowires. Naowires with a cross-section dimension of 50 nm × 100 nm (width × height) were obtained and phase change functionality demonstrated.
This work reports on the fabrication process and measurements of a novel radio frequency microelectromechanical system (RF MEMS) capacitive shunt switch prototype with a mechanically unconstrained armature. The prototype is fabricated in a low cost process based on a printed circuit board (PCB) bonded to a glass slide. The minimum actuation voltage (V act)… (More)