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For the realistic implementation of an ideal field emission device with quasi-zero tunneling barrier, a new and fundamental approach has been conducted by inducing an intelligent thin layer on the… (More)
Abstract Lateral type poly‐silicon field emitters were fabricated by utilizing the LOCOS (Local Oxidation of Silicon) process. For the implementation of an ideal field emission device with quasi‐zero… (More)
Lateral type poly-silicon field emitters were fabricated by utilizing the local oxidation of silicon process. For the realistic implementation of an ideal field-emission device with quasizero… (More)
We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor… (More)
Lateral-type polysilicon field emission triode, consisting of two symmetric gate tips aligned by an angle of 70/spl deg/ with respect to the sharp cathode tips was fabricated by using local oxidation… (More)