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Increasing demand for higher-bandwidth DRAM drive TSV technology development. With the capacity of fine-pitch wide I/O , DRAM can be directly integrated on the interposer or host chip and communicate with the memory controller. However, there are many limitations, such as reliability and testability, in developing the technology. It is advantageous to… (More)
In this paper, HBM DRAM with TSV technique is introduced. This paper covers the general TSV feature and techniques such as TSV architecture, TSV reliability, TSV open / short test, and TSV repair. And HBM DRAM, representative DRAM product using TSV, is widely presented, especially the use and features.
Because of the expansion of high performance computing (HPC) and server market, demand for HBM DRAM is increasing. With this market flow, diverse customers require various HBM product families. One customer requirement is full bandwidth with less density. Therefore, this work presents a HBM DRAM, which supports 4, 8, and even 2-hi stacks with full-bandwidth… (More)