Learn More
Increasing demand for higher-bandwidth DRAM drive TSV technology development. With the capacity of fine-pitch wide I/O [1], DRAM can be directly integrated on the interposer or host chip and communicate with the memory controller. However, there are many limitations, such as reliability and testability, in developing the technology. It is advantageous to(More)
Because of the expansion of high performance computing (HPC) and server market, demand for HBM DRAM is increasing. With this market flow, diverse customers require various HBM product families. One customer requirement is full bandwidth with less density. Therefore, this work presents a HBM DRAM, which supports 4, 8, and even 2-hi stacks with full-bandwidth(More)
  • 1