Kewei Zuo

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—As continued scaling becomes increasingly difficult, 3D integration with through silicon vias (TSVs) has emerged as a viable solution to achieve higher bandwidth and power efficiency. Mechanical stress induced by thermal mismatch between TSVs and the silicon bulk arising during wafer fabrication and 3D integration, is a key constraint. In this work, we(More)
The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Abstract—As continued scaling becomes increasingly difficult, 3D integration with through silicon vias (TSVs) has emerged as a viable solution to achieve higher bandwidth and power efficiency. Mechanical stress induced by thermal mismatch(More)
As continued scaling becomes increasingly difficult, 3D integration has emerged as a viable solution to achieve higher bandwidth and power efficiency. Through-silicon-vias (TSVs), which directly connect stacked structures die-to-die, is one of the key techniques enabling 3D integration. The process steps and physical presence of TSVs, however, may generate(More)
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