Keum-Whan Noh

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The importance of data retention characteristic is increased as the memory has been scaled down and multi-level programming. The leakage current of the inter-poly dielectric (IPD) at low electric field is related with data retention and the charge of the threshold voltage distribution is increased when the number of storage charges in the floating gate is(More)
Keywords: Inter-poly dielectric (IPD) ONO Leakage current Bias polarity a b s t r a c t Retention characteristic represents a capability to maintain the storage data and it is related with the reliability of memory device. The retention characteristic is degraded by the leakage of charges from a floating gate to a control gate, and thus the leakage current(More)
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