Kenneth Maclean

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Tamar S Mentzel3
Marc A Kastner3
3Tamar S Mentzel
3Marc A Kastner
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We investigate the effect of electrostatic screening on a nanoscale silicon MOSFET electrometer. We find that screening by the lightly doped p-type substrate, on which the MOSFET is fabricated, significantly affects the sensitivity of the device. We are able to tune the rate and magnitude of the screening effect by varying the temperature and the voltages(More)
Contact effects are a common impediment to electrical measurements throughout the fields of nanoelectronics, organic electronics, and the emerging field of graphene electronics. We demonstrate a novel method of measuring electrical conductance in a thin film of amorphous germanium that is insensitive to contact effects. The measurement is based on the(More)
We measure charge transport in a hydrogenated amorphous silicon (a-Si:H) thin film using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances even in the presence of blocking contacts. At high temperatures, where the resistance of the a-Si:H is not too large, the(More)
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